Designing a high speed-low power carry select adder circuit using carbon nano tubes based on field effect transistors
Department of Electrical Engineering, College of Electrical Engineering and Computer Science, National Taiwan University, Taipei, Taiwan
Abstract
The purpose of this study is designing a carry select adder using carbon nano tubes based field effect transistors. As the main focus of VLSI circuit design is designing low power and high speed circuits, various methods have been introduced and developed to obtain this goal. In this study power consumption is reduced as much as possible utilizing nano scale transistors and decreasing supply voltage. To evaluate the proposed method CSA full adder is implemented as a case study. Considering different technologies CNTFET is selected for our design due to its advantages over its counterparts. Simulations are performed in HSPICE environment. Simulation results revealed that the proposed method is able to significantly decrease power, delay and power delay production.
Keywords
Full adder, CNTFET, Power consumption, Delay, Power delay product
Digital Object Identifier (DOI)
https://doi.org/10.21833/AEEE.2019.02.001
Article history
Received 5 November 2018, Received in revised form 10 January 2019, Accepted 20 January 2019
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How to cite
Chang YW and Cheng CY (2019). Designing a high speed-low power carry select adder circuit using carbon nano tubes based on field effect transistors. Annals of Electrical and Electronic Engineering, 2(2): 1-5
References (8)
- Amelifard B, Fallah F, and Pedram M (2005). Closing the gap between carry select Adder and ripple carry adder: A new class of low-power high-performance adders. In the Sixth International Symposium on Quality Electronic Design, IEEE, San Jose, CA, USA: 148-152. https://doi.org/10.1109/ISQED.2005.131 [Google Scholar]
- Chang CH, Gu J, and Zhang M (2005). A review of 0.18-/spl mu/m full adder performances for tree structured arithmetic circuits. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 13(6): 686-695. https://doi.org/10.1109/TVLSI.2005.848806 [Google Scholar]
- Goel S, Gollamudi S, Kumar A, Bayoumi M (2004). On the design of low-energy hybrid CMOS 1-bit full adder cells. In the 47th International Midwest Symposium on Circuits and Systems, IEEE, Hiroshima, Japan, 2: 209- 211. https://doi.org/10.1109/MWSCAS.2004.1354129 [Google Scholar]
- Hiremath Y (2014). A novel 8-bit carry select adder using 180nm CMOS process technology. International Journal of Emerging Engineering Research and Technology, 2(6): 187-194. [Google Scholar]
- Kavehei O, Azghadi MR, Navi K, and Mirbaha AP (2008). Design of robust and high-performance 1-bit CMOS full adder for nanometer design. In the IEEE Computer Society Annual Symposium on VLSI, IEEE, Montpellier, France: 10-15. https://doi.org/10.1109/ISVLSI.2008.16 [Google Scholar]
- Navi K, Kavehei O, Rouholamini M, Sahafi A, Mehrabi S, and Dadkhahi N (2008). Low-power and high-performance 1-bit CMOS full-adder cell. Journal of Computers, 3(2): 48-54. https://doi.org/10.4304/jcp.3.2.48-54 [Google Scholar]
- Shoarinejad A, Ung SA, and Badawy W (2003). Low power single bit full adder cells. Canadian Journal of Electrical and Computer Engineering, 28(1): 3-9. https://doi.org/10.1109/CJECE.2003.1426068 [Google Scholar]
- Soudris D, Piguet C, and Goutis C (2010). Designing CMOS circuits for low power. Springer, Heidelberg, Germany. [Google Scholar]